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Vishay launches next generation D series high voltage power MOSFET first device

2012-07-11From:www.partinchina.com

Recently, Vishay Intertechnology, Inc. announced, to launch the next generation of D series high voltage power MOSFET first device. The new 400V,500V and 600V N channel devices having low on-resistance, ultra low gate charge and3A~ 36A current, using a variety of packaging.
Recently released the D series MOSFET is based on the new high pressure belt technology, make the efficiency and power density to a new level. Device of strip design with the smaller die size and termination, the gate charge than the previous generation scheme for low of 50%, while improving the switching speed, reduce on-resistance and input capacitance.
400V,500V and600V device on-state resistance were 0.17?,0.13? And 0.34?. Ultra low on-resistance imply that extremely low conduction and switching losses, to the server and communication power system, welding, plasma cutting, battery charger, fluorescent lamp, high intensity discharge ( HID ) lighting, semiconductor devices and electromagnetic heating for high power, high performance switch power and its application in energy saving.
D series MOSFET400V,500V and600V device gate charge respectively 9nC,6nC and 45nC, has the best gate charge and on-resistance product, the value is used in a power conversion applications MOSFET key figure of merit ( FOM ),400V,500V and 600V device FOM respectively for 7.65Ω-nC,15.6-nC and12.3 Ω -nCΩ.
The new D series MOSFET using a simple gate drive circuit, very durable body diode, is easy to design into a more compact, more light, heat less terminal product. Devices in accordance with the RoHS directive, with IEC61249-2-21halogen free requirements, Avalanche ( UIS ) grading let device can work stably and reliably.
Recently, Vishay Intertechnology, Inc. announced, to launch the next generation of D series high voltage power MOSFET first device. The new 400V,500V and 600V N channel devices having low on-resistance, ultra low gate charge and3A~ 36A current, using a variety of packaging.
Recently released the D series MOSFET is based on the new high pressure belt technology, make the efficiency and power density to a new level. Device of strip design with the smaller die size and termination, the gate charge than the previous generation scheme for low of 50%, while improving the switching speed, reduce on-resistance and input capacitance.
400V,500V and600V device on-state resistance were 0.17?,0.13? And 0.34?. Ultra low on-resistance imply that extremely low conduction and switching losses, to the server and communication power system, welding, plasma cutting, battery charger, fluorescent lamp, high intensity discharge ( HID ) lighting, semiconductor devices and electromagnetic heating for high power, high performance switch power and its application in energy saving.
D series MOSFET400V,500V and600V device gate charge respectively 9nC,6nC and 45nC, has the best gate charge and on-resistance product, the value is used in a power conversion applications MOSFET key figure of merit ( FOM ),400V,500V and 600V device FOM respectively for 7.65Ω-nC,15.6-nC and12.3 Ω -nCΩ.
The new D series MOSFET using a simple gate drive circuit, very durable body diode, is easy to design into a more compact, more light, heat less terminal product. Devices in accordance with the RoHS directive, with IEC61249-2-21halogen free requirements, Avalanche ( UIS ) grading let device can work stably and reliably.
Recently, Vishay Intertechnology, Inc. announced, to launch the next generation of D series high voltage power MOSFET first device. The new 400V,500V and 600V N channel devices having low on-resistance, ultra low gate charge and3A~ 36A current, using a variety of packaging.
Recently released the D series MOSFET is based on the new high pressure belt technology, make the efficiency and power density to a new level. Device of strip design with the smaller die size and termination, the gate charge than the previous generation scheme for low of 50%, while improving the switching speed, reduce on-resistance and input capacitance.
400V,500V and600V device on-state resistance were 0.17?,0.13? And 0.34?. Ultra low on-resistance imply that extremely low conduction and switching losses, to the server and communication power system, welding, plasma cutting, battery charger, fluorescent lamp, high intensity discharge ( HID ) lighting, semiconductor devices and electromagnetic heating for high power, high performance switch power and its application in energy saving.
D series MOSFET400V,500V and600V device gate charge respectively 9nC,6nC and 45nC, has the best gate charge and on-resistance product, the value is used in a power conversion applications MOSFET key figure of merit ( FOM ),400V,500V and 600V device FOM respectively for 7.65Ω-nC,15.6-nC and12.3 Ω -nCΩ.
The new D series MOSFET using a simple gate drive circuit, very durable body diode, is easy to design into a more compact, more light, heat less terminal product. Devices in accordance with the RoHS directive, with IEC61249-2-21halogen free requirements, Avalanche ( UIS ) grading let device can work stably and reliably.
Recently, Vishay Intertechnology, Inc. announced, to launch the next generation of D series high voltage power MOSFET first device. The new 400V,500V and 600V N channel devices having low on-resistance, ultra low gate charge and3A~ 36A current, using a variety of packaging.
Recently released the D series MOSFET is based on the new high pressure belt technology, make the efficiency and power density to a new level. Device of strip design with the smaller die size and termination, the gate charge than the previous generation scheme for low of 50%, while improving the switching speed, reduce on-resistance and input capacitance.
400V,500V and600V device on-state resistance were 0.17?,0.13? And 0.34?. Ultra low on-resistance imply that extremely low conduction and switching losses, to the server and communication power system, welding, plasma cutting, battery charger, fluorescent lamp, high intensity discharge ( HID ) lighting, semiconductor devices and electromagnetic heating for high power, high performance switch power and its application in energy saving.
D series MOSFET400V,500V and600V device gate charge respectively 9nC,6nC and 45nC, has the best gate charge and on-resistance product, the value is used in a power conversion applications MOSFET key figure of merit ( FOM ),400V,500V and 600V device FOM respectively for 7.65Ω-nC,15.6-nC and12.3 Ω -nCΩ.
The new D series MOSFET using a simple gate drive circuit, very durable body diode, is easy to design into a more compact, more light, heat less terminal product. Devices in accordance with the RoHS directive, with IEC61249-2-21halogen free requirements, Avalanche ( UIS ) grading let device can work stably and reliably.

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